日本爱普生TCXO温补晶振X1G005161001500发展的简单介绍
高精度、低功耗和小型化,仍然是TCXO的研究课题.在小型化与片式化方面,面临不少困难,其中主要的有两点：一是小型化会使石英晶体振子的频率可变幅度变小,温度补偿更加困难；二是片式封装后在其回流焊接作业中,爱普生温补晶振由于焊接温度远高于TCXO的最大允许温度,会使晶体振子的频率发生变化,若不采限局部散热降温措施,难以将TCXO的频率变化量控制在±0.5×10－6以下.但是,TCXO的技术水平的提高并没进入到极限,创新的内容和潜力仍较大.
日本爱普生TCXO晶振,X1G005161001500温补晶振
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爱普生晶振编码
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型号
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频率
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长x宽x高
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输出波
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电源电压
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频率偏差
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TCXO
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工作温度
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X1G005421030400
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TG2520SMN
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26.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421030500
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TG2520SMN
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32.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421030600
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TG2520SMN
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38.400000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421030700
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TG2520SMN
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40.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421030800
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TG2520SMN
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16.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421031100
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TG2520SMN
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20.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421031200
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TG2520SMN
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24.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421031300
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TG2520SMN
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25.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421031400
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TG2520SMN
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27.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421031500
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TG2520SMN
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30.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421031600
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TG2520SMN
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48.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421032000
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TG2520SMN
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52.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421032100
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TG2520SMN
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27.600000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421032200
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TG2520SMN
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50.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.660 to 3.465 V
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+/-1.5 ppm
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TCXO
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-40 to +85 °C
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X1G005421032400
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TG2520SMN
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10.000000 MHz
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2.50 x 2.00 x 0.80 mm
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Clipped sine wave
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2.260 to 3.465 V
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+/-1.5 ppm
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TCXO
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40 to +85 °C
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X1G005161000200
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TG2520CEN
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25.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161000700
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TG2520CEN
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32.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.500 to 3.300 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161000900
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TG2520CEN
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27.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161001100
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TG2520CEN
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16.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.500 to 3.300 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161001200
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TG2520CEN
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25.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161001300
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TG2520CEN
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48.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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3.000 to 3.600 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161001400
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TG2520CEN
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20.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161001500
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TG2520CEN
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26.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161001900
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TG2520CEN
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38.400000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161002200
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TG2520CEN
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12.288000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161002300
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TG2520CEN
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12.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161002500
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TG2520CEN
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40.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161002600
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TG2520CEN
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24.000000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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X1G005161002800
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TG2520CEN
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19.200000 MHz
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2.50 x 2.00 x 0.80 mm
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CMOS
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2.375 to 3.630 V
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+/-2.0 ppm
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TCXO
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-40 to ++85 °C
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生产的X3080型TCXO采用表面贴装和穿孔两种封装,正弦波或逻辑输出,在－55℃～85℃范围内能达到±0.25～±1ppm的精度.国内的产品水平也较高,26M温补晶振推出的TCXO（32～40MHz）在室温下精度优于±1ppm,第一年的频率老化率为±1ppm,频率（机械）微调≥±3ppm,电源功耗≤120mw.前高稳定度的TCXO器件,精度可达±0.05ppm.日本爱普生TCXO晶振,X1G005161001500温补晶振
生产的TCXO频率范围为2～80MHz,温度从－10℃到60℃变化时的稳定度为±1ppm或±2ppm；数字式TCXO的频率覆盖范围为0.2～90MHz,爱普生有源晶振频率稳定度为±0.1ppm（－30℃～+85℃）.日本东泽通信机生产的TCO－935/937型片式直接温补型TCXO,频率温度特性（点频15.36MHz）为±1ppm/－20～+70℃,在5V±5%的电源电压下的频率电压特性为±0.3ppm,输出正弦波波形（幅值为1VPP）,电流损耗不足2mA,体积1,重量仅为1g.日本爱普生TCXO晶振,X1G005161001500温补晶振
TCXO在近十几年中得到长足发展,其中在精密TCXO的研究开发与生产方面,日本居领先和主宰地位.在70年代末汽车电话用TCXO的体积达20以上,爱普生晶振深圳代理商主流产品降至0.4,超小型化的TCXO器件体积仅为0.27.在30年中,TCXO的体积缩小了50余倍乃至100倍.日本京陶瓷公司采用回流焊接方法生产的表面贴装TCXO厚度由4mm降至2mm,在振荡启动4ms后即可达到额定振荡幅度的90%.日本爱普生TCXO晶振,X1G005161001500温补晶振
