您好！欢迎进入来到康华尔电子爱普生晶振专营！

收藏本站 在线留言 网站地图 联系我们 手机站

康华尔电子-中国供应商

Shenzhen KONUAER electronics co. LTD

SEIKO EPSON CRYSTAL CO,LTD.

爱普生晶振
全国统一服务热线：

86-0755-27838351

石英贴片晶振低损耗,抗振性强,小体积,符合市场发展要求
热门关键词 : 晶振厂家TXC晶振温补晶振SiTime晶振3215晶振鸿星晶振FC-135晶振VCXO晶振西铁城晶振声表面滤波器
当前位置：首页 » 行业资讯 » 首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振

首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振

返回列表 来源：爱普生晶振 查看手机网址
扫一扫!首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振扫一扫!
 浏览：- 发布日期：2022-06-30 17:14:33【大 中 小】
分享到：

首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振

Diodes公司宣布介绍PowerDI 8080-5，an创新的高电流、高能效满足以下需求的电源包电动汽车(EV)应用。车规晶振，这是第一次将在PowerDI8080中发布的产品- 5封装是DMTH4M70SPGWQ，a.符合汽车应用要求的MOSFET的典型RDS(ON)仅为0.54m 栅极驱动为10V，而其栅极电荷为117nC。 这一业界领先的性能支持汽车大功率BLDC的设计者电机驱动、DC-DC转换器和最大化系统的充电系统效率，同时确保功耗保持在绝对的最低限度。 百利通亚陶晶振PowerDI8080-5封装有一个PCB 64mm2的占地面积 ，这比由TO263封装占据的空间 格式。它还有一个非车载配置文件 1.7毫米，比 TO263(D2Pak)。铜夹粘合 在管芯和端子之间 低结至0.36癈/W使能情况 PowerDI8080-5可处理高达 460A并传递功率密度 比TO263大八倍 包裹。 DMTH4M70SPGWQ的型号为AEC-Q101 合格的、有PPAP能力的和制造的 在IATF有16949家认证机构。它的海鸥机翼引线有助于自动光学 检查(AOI)，以及改善 温度循环可靠性

KK3270052 Diodes Incorporated SaRonix-eCera™ KK 32.768kHz ±25ppm -20°C ~ 70°C
KK3270052 Diodes Incorporated SaRonix-eCera™ KK 32.768kHz ±25ppm -20°C ~ 70°C
KK3270052 Diodes Incorporated SaRonix-eCera™ KK 32.768kHz ±25ppm -20°C ~ 70°C
JX7011B0044.736000 Diodes Incorporated SaRonix-eCera™ JX 44.736MHz ±25ppm -20°C ~ 70°C
JX7011B0044.736000 Diodes Incorporated SaRonix-eCera™ JX 44.736MHz ±25ppm -20°C ~ 70°C
JX7011B0044.736000 Diodes Incorporated SaRonix-eCera™ JX 44.736MHz ±25ppm -20°C ~ 70°C
KK3270051 Diodes Incorporated SaRonix-eCera™ KK 32.768kHz ±25ppm -40°C ~ 85°C
KK3270051 Diodes Incorporated SaRonix-eCera™ KK 32.768kHz ±25ppm -40°C ~ 85°C
KK3270051 Diodes Incorporated SaRonix-eCera™ KK 32.768kHz ±25ppm -40°C ~ 85°C
JX5011C0120.000000 Diodes Incorporated SaRonix-eCera™ JX 120MHz ±50ppm -20°C ~ 70°C
JX5011C0120.000000 Diodes Incorporated SaRonix-eCera™ JX 120MHz ±50ppm -20°C ~ 70°C
JX5011C0120.000000 Diodes Incorporated SaRonix-eCera™ JX 120MHz ±50ppm -20°C ~ 70°C
KX2132709Z Diodes Incorporated SaRonix-eCera™ KX 32.768kHz ±25ppm -20°C ~ 70°C
KX2132709Z Diodes Incorporated SaRonix-eCera™ KX 32.768kHz ±25ppm -20°C ~ 70°C
KX2132709Z Diodes Incorporated SaRonix-eCera™ KX 32.768kHz ±25ppm -20°C ~ 70°C
JX7012D0025.001875 Diodes Incorporated SaRonix-eCera™ JX 25.001875MHz ±25ppm -40°C ~ 85°C
JX7012D0025.001875 Diodes Incorporated SaRonix-eCera™ JX 25.001875MHz ±25ppm -40°C ~ 85°C
JX7012D0025.001875 Diodes Incorporated SaRonix-eCera™ JX 25.001875MHz ±25ppm -40°C ~ 85°C
JX7011E0091.500000 Diodes Incorporated SaRonix-eCera™ JX 91.5MHz ±50ppm -40°C ~ 85°C
JX7011E0091.500000 Diodes Incorporated SaRonix-eCera™ JX 91.5MHz ±50ppm -40°C ~ 85°C
JX7011E0091.500000 Diodes Incorporated SaRonix-eCera™ JX 91.5MHz ±50ppm -40°C ~ 85°C
KJ3270004Z Diodes Incorporated SaRonix-eCera™ KJ 32.768kHz ±50ppm -20°C ~ 70°C
KJ3270004Z Diodes Incorporated SaRonix-eCera™ KJ 32.768kHz ±50ppm -20°C ~ 70°C
KJ3270004Z Diodes Incorporated SaRonix-eCera™ KJ 32.768kHz ±50ppm -20°C ~ 70°C
PD10GE159 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 159.375MHz ±50ppm -20°C ~ 70°C
PD10GE159 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 159.375MHz ±50ppm -20°C ~ 70°C
PD10GE159 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 159.375MHz ±50ppm -20°C ~ 70°C
PDGPON155 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 155.52MHz ±50ppm -40°C ~ 85°C
PDGPON155 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 155.52MHz ±50ppm -40°C ~ 85°C
PDGPON155 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 155.52MHz ±50ppm -40°C ~ 85°C
JX7011D0104.000000 Diodes Incorporated SaRonix-eCera™ JX 104MHz ±25ppm -40°C ~ 85°C
JX7011D0104.000000 Diodes Incorporated SaRonix-eCera™ JX 104MHz ±25ppm -40°C ~ 85°C
JX7011D0104.000000 Diodes Incorporated SaRonix-eCera™ JX 104MHz ±25ppm -40°C ~ 85°C
JT255BI0032.000000 Diodes Incorporated SaRonix-eCera™ JT 32MHz ±2ppm -30°C ~ 85°C
JT255BI0032.000000 Diodes Incorporated SaRonix-eCera™ JT 32MHz ±2ppm -30°C ~ 85°C
JT255BI0032.000000 Diodes Incorporated SaRonix-eCera™ JT 32MHz ±2ppm -30°C ~ 85°C
LDA000004 Diodes Incorporated SaRonix-eCera™ LD 100MHz ±50ppm -40°C ~ 85°C
FN2500246 Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500246 Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500246 Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN1000064 Diodes Incorporated SaRonix-eCera™ FN 10MHz ±50ppm -20°C ~ 70°C
FN1000064 Diodes Incorporated SaRonix-eCera™ FN 10MHz ±50ppm -20°C ~ 70°C
FN1000064 Diodes Incorporated SaRonix-eCera™ FN 10MHz ±50ppm -20°C ~ 70°C
UJ2600001 Diodes Incorporated SaRonix-eCera™ UJ 26MHz ±20ppm -30°C ~ 85°C
UJ2600001 Diodes Incorporated SaRonix-eCera™ UJ 26MHz ±20ppm -30°C ~ 85°C
UJ2600001 Diodes Incorporated SaRonix-eCera™ UJ 26MHz ±20ppm -30°C ~ 85°C
FN7500043 Diodes Incorporated SaRonix-eCera™ FN 75MHz ±25ppm -20°C ~ 70°C
FN7500043 Diodes Incorporated SaRonix-eCera™ FN 75MHz ±25ppm -20°C ~ 70°C
FN7500043 Diodes Incorporated SaRonix-eCera™ FN 75MHz ±25ppm -20°C ~ 70°C
FNSTB1027 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 27MHz ±30ppm -20°C ~ 70°C
Diodes的优势：

行业领先的品质因数 低RDS(on)和Qg将功耗降至最低，并且开关损耗，提高效率

低Rthjc 0.35℃/W rth JC支持最高460A的漏极电流

64mm2的PCB尺寸 PowerDI8080-5仅占TO263电路板的40%面积，有利于更高的功率密度设计

低封装电感 夹片设计降低了寄生电感，改善了电磁干扰 表演

镀锡鸥翼引线 通过使用AOI实现目视检查，并提高高温循环可靠性，耐高温晶振

应用程序：高功率DC-DC转换器，电动汽车充电系统，大功率BLDC电机控制

首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振

FNSTB1027 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 27MHz ±30ppm -20°C ~ 70°C
FNSTB1027 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 27MHz ±30ppm -20°C ~ 70°C
FNSURV054 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 54MHz ±30ppm -20°C ~ 70°C
FNSURV054 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 54MHz ±30ppm -20°C ~ 70°C
FNSURV054 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 54MHz ±30ppm -20°C ~ 70°C
FDSAS6062 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 62.5MHz ±50ppm -20°C ~ 70°C
FDSAS6062 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 62.5MHz ±50ppm -20°C ~ 70°C
FDSAS6062 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 62.5MHz ±50ppm -20°C ~ 70°C
FN5000121 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -20°C ~ 70°C
FN5000121 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -20°C ~ 70°C
FN5000121 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -20°C ~ 70°C
FD2450017 Diodes Incorporated SaRonix-eCera™ FD 24.576MHz ±50ppm -40°C ~ 85°C
FD2450017 Diodes Incorporated SaRonix-eCera™ FD 24.576MHz ±50ppm -40°C ~ 85°C
FD2450017 Diodes Incorporated SaRonix-eCera™ FD 24.576MHz ±50ppm -40°C ~ 85°C
FN2500140 Diodes Incorporated SaRonix-eCera™ FN 25.000625MHz ±25ppm -40°C ~ 85°C
FN2500140 Diodes Incorporated SaRonix-eCera™ FN 25.000625MHz ±25ppm -40°C ~ 85°C
FN2500140 Diodes Incorporated SaRonix-eCera™ FN 25.000625MHz ±25ppm -40°C ~ 85°C
FN4800068 Diodes Incorporated SaRonix-eCera™ FN 48MHz ±50ppm -20°C ~ 70°C
FN4800068 Diodes Incorporated SaRonix-eCera™ FN 48MHz ±50ppm -20°C ~ 70°C
FN4800068 Diodes Incorporated SaRonix-eCera™ FN 48MHz ±50ppm -20°C ~ 70°C
FN3330078 Diodes Incorporated SaRonix-eCera™ FN 33.333MHz ±30ppm -40°C ~ 85°C
FN3330078 Diodes Incorporated SaRonix-eCera™ FN 33.333MHz ±30ppm -40°C ~ 85°C
FN3330078 Diodes Incorporated SaRonix-eCera™ FN 33.333MHz ±30ppm -40°C ~ 85°C
FN0200045 Diodes Incorporated SaRonix-eCera™ FN 2.048MHz ±50ppm -20°C ~ 70°C
FN0200045 Diodes Incorporated SaRonix-eCera™ FN 2.048MHz ±50ppm -20°C ~ 70°C
FN0200045 Diodes Incorporated SaRonix-eCera™ FN 2.048MHz ±50ppm -20°C ~ 70°C
NX51500001 Diodes Incorporated SaRonix-eCera™ NX 50MHz ±25ppm -40°C ~ 85°C
NX51500001 Diodes Incorporated SaRonix-eCera™ NX 50MHz ±25ppm -40°C ~ 85°C
NX51500001 Diodes Incorporated SaRonix-eCera™ NX 50MHz ±25ppm -40°C ~ 85°C
FK2400017 Diodes Incorporated SaRonix-eCera™ FK 24MHz ±25ppm -40°C ~ 85°C
FK2400017 Diodes Incorporated SaRonix-eCera™ FK 24MHz ±25ppm -40°C ~ 85°C
FK2400017 Diodes Incorporated SaRonix-eCera™ FK 24MHz ±25ppm -40°C ~ 85°C
FK2450016 Diodes Incorporated SaRonix-eCera™ FK 24.576MHz ±25ppm -20°C ~ 70°C
FK2450016 Diodes Incorporated SaRonix-eCera™ FK 24.576MHz ±25ppm -20°C ~ 70°C
FK2450016 Diodes Incorporated SaRonix-eCera™ FK 24.576MHz ±25ppm -20°C ~ 70°C
FK2500025 Diodes Incorporated SaRonix-eCera™ FK 25MHz ±25ppm -40°C ~ 85°C
FK2500025 Diodes Incorporated SaRonix-eCera™ FK 25MHz ±25ppm -40°C ~ 85°C
FK2500025 Diodes Incorporated SaRonix-eCera™ FK 25MHz ±25ppm -40°C ~ 85°C
FK2500067 Diodes Incorporated SaRonix-eCera™ FK 25MHz ±50ppm -40°C ~ 105°C
FK2500067 Diodes Incorporated SaRonix-eCera™ FK 25MHz ±50ppm -40°C ~ 105°C
FK2500067 Diodes Incorporated SaRonix-eCera™ FK 25MHz ±50ppm -40°C ~ 105°C
FN5000138 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -40°C ~ 85°C
FN5000138 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -40°C ~ 85°C
FN5000138 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -40°C ~ 85°C
FN5000145 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -40°C ~ 85°C
FN5000145 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -40°C ~ 85°C
FN5000145 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±50ppm -40°C ~ 85°C
FN2500233Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500233Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500233Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振

DMTH4M70SPGWQ 40V+175℃ N 沟道增强模式MOSFET PowerDI8080-5，该MOSFET旨在满足汽车应用的严格要求。它符合AEC-Q101标准，由PPAP支持，耐高温晶振，特征：

额定温度为+175℃–非常适合高环境温度环境
生产中的100% 非钳位感应开关 (UIS) 测试 —
确保更可靠和更稳健的终端应用
高转换效率
低 RDS(ON)——最大限度地减少功率损耗
改善光学检测的可湿性侧面
切换速度快
低输入电容
无铅表面处理；符合 RoHS 标准 
不含卤素和锑。“绿色”设备 

DMTH4M70SPGWQ适用于需要特定变更控制的汽车应用；该部件符合AEC-Q101标准，支持PPAP，并在IATF 16949认证设施中制造。
应用程序：
发动机管理系统
车身控制电子设备
DC-DC转换器

FN2500258Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500258Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500258Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500264Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500264Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN2500264Z Diodes Incorporated SaRonix-eCera™ FN 25MHz ±50ppm -20°C ~ 70°C
FN5000109 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±25ppm -20°C ~ 70°C
FN5000109 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±25ppm -20°C ~ 70°C
FN5000109 Diodes Incorporated SaRonix-eCera™ FN 50MHz ±25ppm -20°C ~ 70°C
FN1200041Z Diodes Incorporated SaRonix-eCera™ FN 12MHz ±50ppm -40°C ~ 85°C
FN1200041Z Diodes Incorporated SaRonix-eCera™ FN 12MHz ±50ppm -40°C ~ 85°C
FN1200041Z Diodes Incorporated SaRonix-eCera™ FN 12MHz ±50ppm -40°C ~ 85°C
NX7125003Z Diodes Incorporated SaRonix-eCera™ NX 25MHz ±50ppm -20°C ~ 70°C
NX7125003Z Diodes Incorporated SaRonix-eCera™ NX 25MHz ±50ppm -20°C ~ 70°C
NX7125003Z Diodes Incorporated SaRonix-eCera™ NX 25MHz ±50ppm -20°C ~ 70°C
FK1220016Z Diodes Incorporated SaRonix-eCera™ FK 12.288MHz ±50ppm -40°C ~ 85°C
FK1220016Z Diodes Incorporated SaRonix-eCera™ FK 12.288MHz ±50ppm -40°C ~ 85°C
FK1220016Z Diodes Incorporated SaRonix-eCera™ FK 12.288MHz ±50ppm -40°C ~ 85°C
NX7011D0074.250000 Diodes Incorporated SaRonix-eCera™ NX 74.25MHz ±25ppm -40°C ~ 85°C
NX7011D0074.250000 Diodes Incorporated SaRonix-eCera™ NX 74.25MHz ±25ppm -40°C ~ 85°C
NX7011D0074.250000 Diodes Incorporated SaRonix-eCera™ NX 74.25MHz ±25ppm -40°C ~ 85°C
FNDDR1133 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 133.33MHz ±50ppm -20°C ~ 70°C
FNDDR1133 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 133.33MHz ±50ppm -20°C ~ 70°C
FNDDR1133 Diodes Incorporated SaRonix-eCera™ ASSP XO™ 133.33MHz ±50ppm -20°C ~ 70°C
FJ2500009 Diodes Incorporated SaRonix-eCera™ FJ 25MHz ±25ppm -40°C ~ 85°C
FJ2500009 Diodes Incorporated SaRonix-eCera™ FJ 25MHz ±25ppm -40°C ~ 85°C
FJ2500009 Diodes Incorporated SaRonix-eCera™ FJ 25MHz ±25ppm -40°C ~ 85°C
NX7011D0074.175824 Diodes Incorporated SaRonix-eCera™ NX 74.175824MHz ±25ppm -40°C ~ 85°C
NX7011D0074.175824 Diodes Incorporated SaRonix-eCera™ NX 74.175824MHz ±25ppm -40°C ~ 85°C
NX7011D0074.175824 Diodes Incorporated SaRonix-eCera™ NX 74.175824MHz ±25ppm -40°C ~ 85°C
FJ2500036Z Diodes Incorporated SaRonix-eCera™ FJ 25MHz ±25ppm -20°C ~ 70°C
FJ2500036Z Diodes Incorporated SaRonix-eCera™ FJ 25MHz ±25ppm -20°C ~ 70°C
FJ2500036Z Diodes Incorporated SaRonix-eCera™ FJ 25MHz ±25ppm -20°C ~ 70°C
HX7011C0050.000000 Diodes Incorporated SaRonix-eCera™ HX 50MHz ±25ppm -40°C ~ 105°C
HX7011C0050.000000 Diodes Incorporated SaRonix-eCera™ HX 50MHz ±25ppm -40°C ~ 105°C
HX7011C0050.000000 Diodes Incorporated SaRonix-eCera™ HX 50MHz ±25ppm -40°C ~ 105°C
SHA000001 Diodes Incorporated SaRonix-eCera™ SH 100MHz ±50ppm -40°C ~ 85°C
SHA000001 Diodes Incorporated SaRonix-eCera™ SH 100MHz ±50ppm -40°C ~ 85°C
SHA000001 Diodes Incorporated SaRonix-eCera™ SH 100MHz ±50ppm -40°C ~ 85°C
HX7013D0100.000000 Diodes Incorporated SaRonix-eCera™ HX 100MHz ±50ppm -40°C ~ 90°C
HX7013D0100.000000 Diodes Incorporated SaRonix-eCera™ HX 100MHz ±50ppm -40°C ~ 90°C
HX7013D0100.000000 Diodes Incorporated SaRonix-eCera™ HX 100MHz ±50ppm -40°C ~ 90°C
FN3300073 Diodes Incorporated SaRonix-eCera™ FN 33MHz ±50ppm -40°C ~ 85°C
NX7021D0148.351648 Diodes Incorporated SaRonix-eCera™ NX 148.351648MHz ±25ppm -40°C ~ 85°C
NX7021D0148.351648 Diodes Incorporated SaRonix-eCera™ NX 148.351648MHz ±25ppm -40°C ~ 85°C
NX7021D0148.351648 Diodes Incorporated SaRonix-eCera™ NX 148.351648MHz ±25ppm -40°C ~ 85°C
NX7031D0200.000000 Diodes Incorporated SaRonix-eCera™ NX 200MHz ±25ppm -40°C ~ 85°C
NX7031D0200.000000 Diodes Incorporated SaRonix-eCera™ NX 200MHz ±25ppm -40°C ~ 85°C
NX7031D0200.000000 Diodes Incorporated SaRonix-eCera™ NX 200MHz ±25ppm -40°C ~ 85°C
NX7021D0622.080000 Diodes Incorporated SaRonix-eCera™ NX 622.08MHz ±25ppm -40°C ~ 85°C

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Q on request)" style="box-sizing:inherit">Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 460 A
PD @TA = +25°C (W) 5.6 W
PD @TC = +25°C (W) 428 W
RDS(ON)Max @ VGS(10V)(mΩ) 0.7 mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 10V (nC) 117.1 nC
CISS Typ (pF) 10053 pF
CISS Condition @|VDS| (V) 20 V

首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能,DMTH4M70SPGWQ,ECERA晶振

产品参数：
符合 AEC 标准 是的
合规性（仅 Automotive(Q) 支持 PPAP）汽车级晶振
极性 
ESD Diodes (Y|N) 不
|V DS | (五) 40V
| V GS | (± V) 20 ±V
|我是| @T C  = +25°C (A) 460 安
P D @T A = +25°C (W) 5.6 瓦。
P D @T C = +25°C (W) 428 瓦。
R DS(ON) Max @ V GS (10V)(mΩ) 0.7 毫欧
|V GS(TH) | 最小 (V) 2V
|V GS(TH) | 最大 (V) 4V
Q G 典型值@ |V GS | = 10V (nC) 117.1 nC
C ISS类型 (pF) 10053 pF
C ISS条件@|V DS | (五) 20V

1

“推荐阅读”

【本文标签】：首款采用PowerDI8080封装的40V MOSFET提供业界领先的性能 DMTH4M70SPGWQ ECERA晶振
【责任编辑】：爱普生晶振版权所有：http://www.epsoncrystal.com转载请注明出处

相关行业资讯

最新资讯文章

网站首页爱普生晶振32768K晶振台产晶振国际品牌晶振日产晶振爱普生技术支持公司简介联系我们网站地图
爱普生晶振系列

TCXO（温度补偿） VCXO（压控） OCXO（烤箱控制） 晶体振荡器 水晶单位 爱普生汽车

爱普生晶振

官方微信官方微信

官方公众号官方公众号

Copyright ®2018    深圳市康华尔电子有限公司    版权所有 备案号：粤ICP备17109239号