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有源晶振X1G006001009514适用于5G基站应用

2022-09-23 14:53:19 康华尔电子

爱普生晶振TG-5510CA,是一种高稳定性的TCXO晶振,支持CMOS或限幅正弦输出,小体积晶振尺寸7.0x5.0mm,10脚贴片晶振,有源晶振,电源电压3.3V,频率范围提供10MHz至54MHz,具有高稳定性温补晶振,小体积轻薄型,低抖动,低功耗,低损耗,低耗能,低电源电压,低相位噪声,耐高温,高稳定性等特点,工作温度范围-40℃至+85℃,TG-5510CA贴片晶振通常都是应用到工业,汽车,通信和网络等大型高端设备身上的,为5G基站用晶振而开发。可以广泛应用到5G基站,微波,网络同步,BTS等方面。

有源晶振X1G006001009514适用于5G基站应用

石英晶体振荡器 型号 频率 尺寸 输出波 电源 精度 工作温度
X1G006001004114 TG-5510CA 10.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004214 TG-5510CA 19.200000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004314 TG-5510CA 20.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004414 TG-5510CA 24.576000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004514 TG-5510CA 25.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004614 TG-5510CA 38.880000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004714 TG-5510CA 40.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001004814 TG-5510CA 50.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +105 °C
X1G006001007614 TG-5510CA 30.720000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001007714 TG-5510CA 24.576000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001007814 TG-5510CA 49.152000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001007914 TG-5510CA 24.000000MHz 7.00x5.00x1.50mm Clipped sine wave 3.135 to 3.465 V +/-1.0 ppm -40 to +85 °C
X1G006001008014 TG-5510CA 48.000000MHz 7.00x5.00x1.50mm Clipped sine wave 3.135 to 3.465 V +/-1.0 ppm -40 to +85 °C
X1G006001008114 TG-5510CA 19.200000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C

TG-5510CA

X1G006001008214 TG-5510CA 38.400000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001008314 TG-5510CA 27.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to +85 °C
X1G006001009014 TG-5510CA 25.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009114 TG-5510CA 19.440000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009214 TG-5510CA 25.600000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009314 TG-5510CA 40.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009414 TG-5510CA 12.800000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009514 TG-5510CA 20.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009614 TG-5510CA 38.880000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009714 TG-5510CA 50.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C
X1G006001009814 TG-5510CA 10.000000MHz 7.00x5.00x1.50mm CMOS 3.135 to 3.465 V +/-1.0 ppm -40 to ++85 °C

有源晶振X1G006001009514适用于5G基站应用

温补晶振即温度补偿晶体振荡器(TCXO),是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器。
削波正玄波(Clipped Sine Wave)是有源晶振输出方式的一种,相比方波的谐波分量少很多,但驱动能力较弱,在负载10K/10PF时Vp-p为0.8Vmin.通常为SMD7050,SMD5032,SMD3225等封装的表贴温补晶振使用的输出波形.当然,有源晶振还有CMOS,TTL,ECL,LVDS,正玄波等输出方式,这些输出逻辑方式也各有优缺点,至于如何利用它们我们却是不得而知.所以日本爱普生晶振就推出了相关的技术支持文档,明确指出应当如何在电路设计中应用削波正玄波.


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