有源晶振X1G006001009514适用于5G基站应用
石英晶体振荡器 | 型号 | 频率 | 尺寸 | 输出波 | 电源 | 精度 | 工作温度 |
X1G006001004114 | TG-5510CA | 10.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004214 | TG-5510CA | 19.200000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004314 | TG-5510CA | 20.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004414 | TG-5510CA | 24.576000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004514 | TG-5510CA | 25.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004614 | TG-5510CA | 38.880000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004714 | TG-5510CA | 40.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001004814 | TG-5510CA | 50.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +105 °C |
X1G006001007614 | TG-5510CA | 30.720000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001007714 | TG-5510CA | 24.576000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001007814 | TG-5510CA | 49.152000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001007914 | TG-5510CA | 24.000000MHz | 7.00x5.00x1.50mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006001008014 | TG-5510CA | 48.000000MHz | 7.00x5.00x1.50mm | Clipped sine wave | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006001008114 | TG-5510CA | 19.200000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001008214 | TG-5510CA | 38.400000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001008314 | TG-5510CA | 27.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to +85 °C |
X1G006001009014 | TG-5510CA | 25.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009114 | TG-5510CA | 19.440000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009214 | TG-5510CA | 25.600000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009314 | TG-5510CA | 40.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009414 | TG-5510CA | 12.800000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009514 | TG-5510CA | 20.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009614 | TG-5510CA | 38.880000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009714 | TG-5510CA | 50.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G006001009814 | TG-5510CA | 10.000000MHz | 7.00x5.00x1.50mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
有源晶振X1G006001009514适用于5G基站应用
温补晶振即温度补偿晶体振荡器(TCXO),是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器。
削波正玄波(Clipped Sine Wave)是有源晶振输出方式的一种,相比方波的谐波分量少很多,但驱动能力较弱,在负载10K/10PF时Vp-p为0.8Vmin.通常为SMD7050,SMD5032,SMD3225等封装的表贴温补晶振使用的输出波形.当然,有源晶振还有CMOS,TTL,ECL,LVDS,正玄波等输出方式,这些输出逻辑方式也各有优缺点,至于如何利用它们我们却是不得而知.所以日本爱普生晶振就推出了相关的技术支持文档,明确指出应当如何在电路设计中应用削波正玄波.